According to foreign media reports, Intel will acquire Moovit, an Israeli public transportation solution provider, for US$1 billion. The financial news website Calcalist reported on Sunday local time that the chip maker Intel Corporation’s negotiation to buy Israeli public transportation app developer Moovit has entered the final stage, with a transaction value of US$1 billion. Calcalist also q...
Infineon launches second-generation of high-reliability non-volatile SRAM
Infineon Technologies has announced that it is making its second-generation non-volatile Static RAMs (nvSRAM) available.
This new generation of devices has been qualified for QML-Q and high-reliability industrial specifications to support demanding non-volatile code storage and data-logging applications in harsh environments, including aerospace and industrial applications.
The 256 kb STK14C88C and 1 Mb STK14CA8C nvSRAMs are qualified in 32 pin 300 mil dual in-line ceramic packages for MIL-PRF-38535 QML-Q specifications (-55°C to 125°C) and for Infineon’s industrial standards (-40°C to 85°C). Both 5 V and 3 V versions support boot code, data logging and calibration data storage for aerospace, communications and navigation systems, in addition to industrial furnaces and railroad control systems. Infineon is also offering wafer sales to support systems in a package solutions.
“The new generation of nvSRAMs extends Infineon’s leadership in charge trap memories,” said Helmut Puchner, VP Fellow of Aerospace and Defense, at Infineon Technologies. “These QML-Q and high-reliability, industrial-qualified devices in our expanded nvSRAM family demonstrate our commitment to deliver solutions for harsh operating environments that require high performance, high-reliability memories.”
Infineon’s nvSRAM technology combines high-performance SRAM with best-in-class SONOS non-volatile technology. Under normal operating conditions, nvSRAM acts similarly to a conventional asynchronous SRAM, however, in the event of a power failure, a nvSRAM automatically saves a copy of the SRAM data into non-volatile memory, where the data is protected for over 20 years.